Codsiga Mosfet, IGBT iyo vacuum triode ee mashiinka kululaynta induction ee warshadaha (foornada)

Casri ah Induction Power Kuleyliyaha Tiknoolajiyada sahaydu waxay inta badan ku tiirsan tahay saddex nooc oo ah aaladaha korantada asaasiga ah: MOSFET, IGBT iyo vacuum triode, kuwaas oo mid kastaa uu door aan la bedeli karin ka ciyaara xaalado gaar ah. MOSFET waxay noqotay doorashada koowaad ee kuleyliyaha saxda ah sababtoo ah sifooyinkeeda soo noqnoqda ee aad u wanaagsan (100kHz-1MHz), waxayna si gaar ah ugu habboon tahay xaaladaha hooseeya iyo kuwa saxda ah sida dhalaalidda dahabka iyo alxanka qaybaha elektiroonigga ah. Waxaa ka mid ah, SiC/GaN MOSFET waxay kordhisay waxtarka in ka badan 90%, laakiin xadka awoodda (sida caadiga ah

Dhinaca soo noqnoqoshada dhexdhexaadka ah iyo awoodda sare (1kHz-100kHz), IGBT waxay muujisay faa'iido tartan adag. Sida aaladda asaasiga ah ee foornooyinka dhalaalidda warshadaha iyo birta Daawaynta kulaylka khadadka wax soo saarka, modules IGBT si fudud u gaari karaan wax soo saarka awoodda heerka MW. Tiknoolajiyadeeda qaan-gaadhka ah iyo wax-ku-oolnimada aadka u wanaagsan ayaa ka dhigaysa doorashada caadiga ah ee qalabka wax lagu farsameeyo sida birta iyo aluminiumka. Soo bandhigida tignoolajiyada SiC, inta jeer ee hawlgalka jiilka cusub ee IGBT ayaa dhaaftay 50kHz, taas oo sii xoojinaysa awooddeeda suuqa ee kooxda soo noqnoqoshada dhexdhexaadka ah.

Xaalado-soo noqnoqosho-sare iyo awood sare (1MHZ-30MHz), saddex-geesoodka faakuumku wali waxay ku hayaan boos aan gariirnayn. Hadday tahay dhalaalid bir ah oo gaar ah, jiilka balaasmaha, ama qalabka gudbinta baahinta, saddex-geesoodka faakuumka ayaa bixin kara soosaarka tamarta deggan ee heerka MW. Iska caabbinta korantada sare ee gaarka ah iyo qaab dhismeedka wadista fudud ayaa ka dhigaya doorashada ugu habboon ee farsamaynta biraha firfircoon sida titanium iyo zirconium, in kasta oo ay waxtarkeedu hooseeyo (50% -70%) iyo kharashyada dayactirka oo sarreeya.

Horumarka teknoolajiyada ee hadda jira wuxuu muujinayaa isbeddel cad oo isku-duubni ah: MOSFET waxay sii waddaa inay gasho goobaha tamarta-sare iyo awoodda sare iyada oo loo marayo tignoolajiyada SiC/GaN; IGBT waxay sii wadaa inay balaariso xadiga soo noqnoqda shaqada iyada oo loo marayo hal-abuurnimo wax; halka tuubooyinka faakuumka ay la kulmaan cadaadis tartan ah oo ka imanaya aaladaha gobolka adag iyagoo ilaalinaya faa'iidooyinka soo noqnoqda aadka u sarreeya. Kobcinta tignoolajiyadan ayaa dib u qaabaynaysa muuqaalka warshadaha ee sahayda kulaylinta induction.

Xulashada dhabta ah, injineeradu waxay u baahan yihiin inay si buuxda u tixgeliyaan saddexda arrimood ee ugu waaweyn ee soo noqnoqda, awoodda iyo dhaqaalaha: MOSFET waxaa loo door bidaa soo noqnoqoshada sare iyo awoodda hoose, IGBT waxaa loo doortaa soo noqnoqoshada dhexdhexaadka ah iyo awoodda sare, iyo saddex-geesoodka vacuum ayaa wali loo baahan yahay soo noqnoqoshada ultra-sare iyo awoodda sare. Horumarinta tikniyoolajiyadda semiconductor-ka ballaaran, heerkan xulashada ayaa isbedeli kara, laakiin mustaqbalka la saadaalin karo, saddexda nooc ee aaladaha ayaa sii wadi doona inay door muhiim ah ka ciyaaraan aagagga faa'iidada leh, waxayna si wadajir ah kor ugu qaadaan horumarinta tignoolajiyada kuleyliyaha induction ee jihada hufan oo hufan.